ON Semiconductor - NVD6416ANLT4G-VF01

KEY Part #: K6392839

NVD6416ANLT4G-VF01 Pricing (USD) [209914PC Stock]

  • 1 pcs$0.17620
  • 2,500 pcs$0.16019

Nimewo Pati:
NVD6416ANLT4G-VF01
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 19A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - JFETs, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVD6416ANLT4G-VF01 Atribi pwodwi yo

Nimewo Pati : NVD6416ANLT4G-VF01
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 19A DPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 74 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 71W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63