Microsemi Corporation - APT30GN60BDQ2G

KEY Part #: K6422127

APT30GN60BDQ2G Pricing (USD) [19015PC Stock]

  • 1 pcs$2.17822
  • 112 pcs$2.16738

Nimewo Pati:
APT30GN60BDQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 63A 203W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT30GN60BDQ2G Atribi pwodwi yo

Nimewo Pati : APT30GN60BDQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 63A 203W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 63A
Kouran - Pèseptè batman (Icm) : 90A
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 30A
Pouvwa - Max : 203W
Oblije chanje enèji : 525µJ (on), 700µJ (off)
Kalite Antre : Standard
Gate chaje : 165nC
Td (on / off) @ 25 ° C : 12ns/155ns
Kondisyon egzamen an : 400V, 30A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]

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