IXYS - MMIX1G320N60B3

KEY Part #: K6422211

MMIX1G320N60B3 Pricing (USD) [2492PC Stock]

  • 1 pcs$17.37676

Nimewo Pati:
MMIX1G320N60B3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in IXYS MMIX1G320N60B3 electronic components. MMIX1G320N60B3 can be shipped within 24 hours after order. If you have any demands for MMIX1G320N60B3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1G320N60B3 Atribi pwodwi yo

Nimewo Pati : MMIX1G320N60B3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH
Seri : GenX3™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 400A
Kouran - Pèseptè batman (Icm) : 1000A
Vce (sou) (Max) @ Vge, Ic : 1.5V @ 15V, 100A
Pouvwa - Max : 1000W
Oblije chanje enèji : 2.7mJ (on), 5mJ (off)
Kalite Antre : Standard
Gate chaje : 585nC
Td (on / off) @ 25 ° C : 44ns/250ns
Kondisyon egzamen an : 480V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : 66ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 24-PowerSMD, 21 Leads
Pake Aparèy Founisè : 24-SMPD

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