Infineon Technologies - IPA80R900P7XKSA1

KEY Part #: K6418133

IPA80R900P7XKSA1 Pricing (USD) [52540PC Stock]

  • 1 pcs$0.75676
  • 10 pcs$0.67105
  • 100 pcs$0.53028
  • 500 pcs$0.41123
  • 1,000 pcs$0.30710

Nimewo Pati:
IPA80R900P7XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CHANNEL 800V 6A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA80R900P7XKSA1 Atribi pwodwi yo

Nimewo Pati : IPA80R900P7XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CHANNEL 800V 6A TO220
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 900 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 500V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 26W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220 Full Pack
Pake / Ka : TO-220-3 Full Pack