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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVMS5P02R2G

ON Semiconductor - NVMS5P02R2G

KEY Part #: K6393805

NVMS5P02R2G Pricing (USD) [218211PC Stock]

  • 1 pcs$0.16950
  • 2,500 pcs$0.15409
Nimewo Pati:
NVMS5P02R2G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 5.4A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMS5P02R2G electronic components. NVMS5P02R2G can be shipped within 24 hours after order. If you have any demands for NVMS5P02R2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMS5P02R2G Atribi pwodwi yo

Nimewo Pati : NVMS5P02R2G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 5.4A 8SOIC
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.95A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 33 mOhm @ 5.4A, 4.5V
Vgs (th) (Max) @ Id : 1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 4.5V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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