GeneSiC Semiconductor - GAP05SLT80-220

KEY Part #: K6442653

GAP05SLT80-220 Pricing (USD) [3060PC Stock]

  • 10 pcs$154.26127

Nimewo Pati:
GAP05SLT80-220
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 8KV 50MA AXIAL. Schottky Diodes & Rectifiers 8000V 0.05A Standard
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GAP05SLT80-220 electronic components. GAP05SLT80-220 can be shipped within 24 hours after order. If you have any demands for GAP05SLT80-220, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GAP05SLT80-220 Atribi pwodwi yo

Nimewo Pati : GAP05SLT80-220
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 8KV 50MA AXIAL
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 8000V
Kouran - Mwayèn Rèktifye (Io) : 50mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 4.6V @ 50mA
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 3.8µA @ 8000V
Kapasite @ Vr, F : 25pF @ 1V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : Axial
Pake Aparèy Founisè : -
Operating Tanperati - Junction : -55°C ~ 175°C
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