Nimewo Pati :
GAP05SLT80-220
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 8KV 50MA AXIAL
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
8000V
Kouran - Mwayèn Rèktifye (Io) :
50mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
4.6V @ 50mA
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
3.8µA @ 8000V
Kapasite @ Vr, F :
25pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Operating Tanperati - Junction :
-55°C ~ 175°C