Vishay Semiconductor Diodes Division - VS-1N1184

KEY Part #: K6441577

VS-1N1184 Pricing (USD) [14255PC Stock]

  • 1 pcs$3.03642
  • 10 pcs$2.74336
  • 25 pcs$2.61564
  • 100 pcs$2.27110
  • 250 pcs$2.16904
  • 500 pcs$1.97764
  • 1,000 pcs$1.72246

Nimewo Pati:
VS-1N1184
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 35A DO203AB. Rectifiers 100 Volt 35 Amp
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-1N1184 electronic components. VS-1N1184 can be shipped within 24 hours after order. If you have any demands for VS-1N1184, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1N1184 Atribi pwodwi yo

Nimewo Pati : VS-1N1184
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 35A DO203AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 35A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 110A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10mA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Chassis, Stud Mount
Pake / Ka : DO-203AB, DO-5, Stud
Pake Aparèy Founisè : DO-203AB
Operating Tanperati - Junction : -65°C ~ 190°C

Ou ka enterese tou
  • CDBDSC8650-G

    Comchip Technology

    DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 8A 650V

  • CDBDSC10650-G

    Comchip Technology

    DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V

  • VS-8EWS10STRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A DPAK.

  • VS-8EWS10STRRPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1KV 8A DPAK.

  • VS-CPU6006L-N3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 2x30A FRED Pt TO-247 LL 3L

  • VS-C4PH6006LHN3

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 30A TO247AD. Rectifiers 600V 2x30A FRED Pt TO-247 LL 3L