UH1BHE3_A/I Pricing (USD) [793899PC Stock]
- 1 pcs$0.04916
- 7,500 pcs$0.04892
- Nimewo Pati:
- UH1BHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 1A DO214AC. Rectifiers 1.0A 100 Volt 25ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division UH1BHE3_A/I electronic components. UH1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for UH1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UH1BHE3_A/I Atribi pwodwi yo
Nimewo Pati :
UH1BHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 1A DO214AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.05V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
1µA @ 100V
Kapasite @ Vr, F :
17pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
-
BYM07-200-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt
-
BYM07-100-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt
-
GL34G-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213. Rectifiers 400 Volt 0.5 Amp 10 Amp IFSM
-
GL34B-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Rectifiers 100 Volt 0.5 Amp 10 Amp IFSM
-
GL34J-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213. Rectifiers 600 Volt 0.5 Amp 10 Amp IFSM
-
BYM07-150HE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5A,150V,50NS GL34 AEC-Q101 Qualified
Pati cho
- BYV29B-600PJ
- RL104-N-2-3-AP
- 1N3172A
- CMSH2-40M BK
- VI30120SGHM3/4W
- JAN1N1614R
- 1N4946GP-M3/54
- UES2605R
- CD214B-F3150
- SB340S-E3/54
- DSR01S30SC(TPL3)
- RGP02-16EHE3/53
- ES3GHE3/57T
- UF8CT-E3/4W
- S1DA-E3/5AT
- 1N4446_T50R
- HFA08TB60STRR
- PR3005-T
- PR2006G-T
- STTH20R04W
- SIDC73D170E6X1SA2
- CD214A-B240LF
- 10WQ045FN
- MA2711100L
- MMBD914-7
- 10ETF02STRL
- IRKE91/04A
- 30EPF12
- 20ETF02
- BAT42W-7
- SM4933A-TP
- FR154S-TP
- FR604-AP
- GIB1403-E3/81
- SE40PGHM3_A/H
- RN 1ZV
- CDBB3150-G
- PMEG2010AET,215
- 1N4005GPE-E3/54
- BAS16WF