Vishay Semiconductor Diodes Division - VS-ST110S12P2V

KEY Part #: K6458762

VS-ST110S12P2V Pricing (USD) [976PC Stock]

  • 1 pcs$47.54903
  • 25 pcs$45.28478

Nimewo Pati:
VS-ST110S12P2V
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
SCR 1200V 175A TO-94. SCRs Thyristors - TO-83/94 COM RD-e3
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-ST110S12P2V electronic components. VS-ST110S12P2V can be shipped within 24 hours after order. If you have any demands for VS-ST110S12P2V, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-ST110S12P2V Atribi pwodwi yo

Nimewo Pati : VS-ST110S12P2V
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : SCR 1200V 175A TO-94
Seri : -
Estati Pati : Active
Voltage - Off State : 1.2kV
Voltage - Gate deklanche (Vgt) (Max) : 3V
Kouran - Gate deklanche (Igt) (Max) : 150mA
Voltage - On State (Vm) (Max) : 1.52V
Kouran - Sou Eta (Li (AV)) (Max) : 110A
Kouran - Sou Eta (Li (RMS)) (Max) : 175A
Kouran - Kenbe (Ih) (Max) : 600mA
Kouran - Eta Off (Max) : 20mA
Kouran - Non Rep Repiblik 50, 60Hz (Itsm) : 2270A, 2380A
Kalite SCR : Standard Recovery
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis, Stud Mount
Pake / Ka : TO-209AC, TO-94-4, Stud
Pake Aparèy Founisè : TO-209AC (TO-94)

Ou ka enterese tou
  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAS16E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS16WH6327XTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT323. Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR