Nimewo Pati :
SI2301CDS-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 3.1A SOT23-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
112 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
405pF @ 10V
Disipasyon Pouvwa (Max) :
860mW (Ta), 1.6W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3