Vishay Semiconductor Diodes Division - GURB5H60-E3/81

KEY Part #: K6447305

GURB5H60-E3/81 Pricing (USD) [1469PC Stock]

  • 1,600 pcs$0.27184

Nimewo Pati:
GURB5H60-E3/81
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 5A TO263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GURB5H60-E3/81 electronic components. GURB5H60-E3/81 can be shipped within 24 hours after order. If you have any demands for GURB5H60-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GURB5H60-E3/81 Atribi pwodwi yo

Nimewo Pati : GURB5H60-E3/81
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 5A TO263AB
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 5A
Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 20µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 150°C

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