Nexperia USA Inc. - PSMN063-150D,118

KEY Part #: K6419561

PSMN063-150D,118 Pricing (USD) [119027PC Stock]

  • 1 pcs$0.31230
  • 2,500 pcs$0.31075

Nimewo Pati:
PSMN063-150D,118
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 150V 29A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - RF, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN063-150D,118 Atribi pwodwi yo

Nimewo Pati : PSMN063-150D,118
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 150V 29A DPAK
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 63 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2390pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63