IXFH120N30X3 Pricing (USD) [8047PC Stock]
- 1 pcs$5.12093
- Nimewo Pati:
- IXFH120N30X3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 300V/120A ULTRA JUNCTION X3-CLAS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - SCR, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH120N30X3 electronic components. IXFH120N30X3 can be shipped within 24 hours after order. If you have any demands for IXFH120N30X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH120N30X3 Atribi pwodwi yo
Nimewo Pati :
IXFH120N30X3
Manifakti :
IXYS
Deskripsyon :
300V/120A ULTRA JUNCTION X3-CLAS
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10.5nF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
735W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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