Vishay Semiconductor Diodes Division - 1N4003GP-E3/54

KEY Part #: K6458315

1N4003GP-E3/54 Pricing (USD) [1076814PC Stock]

  • 1 pcs$0.03435
  • 11,000 pcs$0.02897

Nimewo Pati:
1N4003GP-E3/54
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1A DO204AL. Rectifiers Vr/200V Io/1A Glass Passivated
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N4003GP-E3/54 electronic components. 1N4003GP-E3/54 can be shipped within 24 hours after order. If you have any demands for 1N4003GP-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4003GP-E3/54 Atribi pwodwi yo

Nimewo Pati : 1N4003GP-E3/54
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1A DO204AL
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : 8pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-204AL (DO-41)
Operating Tanperati - Junction : -65°C ~ 175°C

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