Infineon Technologies - IRFB4615PBF

KEY Part #: K6416144

IRFB4615PBF Pricing (USD) [35830PC Stock]

  • 1 pcs$0.99090
  • 10 pcs$0.89641
  • 100 pcs$0.72022
  • 500 pcs$0.56017
  • 1,000 pcs$0.46414

Nimewo Pati:
IRFB4615PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 150V 35A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Tiristors - SCR and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFB4615PBF electronic components. IRFB4615PBF can be shipped within 24 hours after order. If you have any demands for IRFB4615PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB4615PBF Atribi pwodwi yo

Nimewo Pati : IRFB4615PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 150V 35A TO-220AB
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id : 5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1750pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 144W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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