ON Semiconductor - FDP8880

KEY Part #: K6398283

FDP8880 Pricing (USD) [84252PC Stock]

  • 1 pcs$0.46409
  • 10 pcs$0.40974
  • 100 pcs$0.30643
  • 500 pcs$0.23765
  • 1,000 pcs$0.18762

Nimewo Pati:
FDP8880
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 54A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDP8880 electronic components. FDP8880 can be shipped within 24 hours after order. If you have any demands for FDP8880, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP8880 Atribi pwodwi yo

Nimewo Pati : FDP8880
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 54A TO-220AB
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta), 54A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 11.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1240pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 55W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3