Diodes Incorporated - DMG4N65CT

KEY Part #: K6393492

DMG4N65CT Pricing (USD) [76032PC Stock]

  • 1 pcs$0.51426
  • 50 pcs$0.41208
  • 100 pcs$0.34108
  • 500 pcs$0.26451
  • 1,000 pcs$0.20882

Nimewo Pati:
DMG4N65CT
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N CH 650V 4A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMG4N65CT electronic components. DMG4N65CT can be shipped within 24 hours after order. If you have any demands for DMG4N65CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG4N65CT Atribi pwodwi yo

Nimewo Pati : DMG4N65CT
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N CH 650V 4A TO220-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13.5nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.19W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3