GeneSiC Semiconductor - GB2X50MPS12-227

KEY Part #: K6472760

GB2X50MPS12-227 Pricing (USD) [1020PC Stock]

  • 1 pcs$45.48386

Nimewo Pati:
GB2X50MPS12-227
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
SIC DIODE 1200V 100A SOT-227. Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 100A SOT-227
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal and Diodes - RF ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GB2X50MPS12-227 electronic components. GB2X50MPS12-227 can be shipped within 24 hours after order. If you have any demands for GB2X50MPS12-227, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GB2X50MPS12-227 Atribi pwodwi yo

Nimewo Pati : GB2X50MPS12-227
Manifakti : GeneSiC Semiconductor
Deskripsyon : SIC DIODE 1200V 100A SOT-227
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 2 Independent
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 93A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 50A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 40µA @ 1200V
Operating Tanperati - Junction : -55°C ~ 175°C
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227
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