FCP125N60E Pricing (USD) [42335PC Stock]
- 1 pcs$1.56535
- 800 pcs$1.55757
- Nimewo Pati:
- FCP125N60E
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 600V 29A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FCP125N60E electronic components. FCP125N60E can be shipped within 24 hours after order. If you have any demands for FCP125N60E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP125N60E Atribi pwodwi yo
Nimewo Pati :
FCP125N60E
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 600V 29A TO220
Seri :
SuperFET® II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
125 mOhm @ 14.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
95nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2990pF @ 380V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
278W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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