RS2JHE3_A/I Pricing (USD) [525400PC Stock]
- 1 pcs$0.07040
- 3,200 pcs$0.06437
- Nimewo Pati:
- RS2JHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 1.5A DO214AA. Rectifiers 1.5A, 800V, 500nS SMB, FS, GPP SM RECT
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RS2JHE3_A/I electronic components. RS2JHE3_A/I can be shipped within 24 hours after order. If you have any demands for RS2JHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS2JHE3_A/I Atribi pwodwi yo
Nimewo Pati :
RS2JHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 1.5A DO214AA
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1.5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
250ns
Kouran - Fèy Reverse @ Vr :
5µA @ 600V
Kapasite @ Vr, F :
17pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 150°C
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