IRF3205LPBF Pricing (USD) [62765PC Stock]
- 1 pcs$0.59788
- 10 pcs$0.53057
- 100 pcs$0.41915
- 500 pcs$0.30749
- 1,000 pcs$0.24276
- Nimewo Pati:
- IRF3205LPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 110A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF3205LPBF electronic components. IRF3205LPBF can be shipped within 24 hours after order. If you have any demands for IRF3205LPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3205LPBF Atribi pwodwi yo
Nimewo Pati :
IRF3205LPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 110A TO-262
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 62A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3247pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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