Toshiba Semiconductor and Storage - 2SJ380(F)

KEY Part #: K6407373

[996PC Stock]


    Nimewo Pati:
    2SJ380(F)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET P-CH 100V 12A TO220NIS.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage 2SJ380(F) electronic components. 2SJ380(F) can be shipped within 24 hours after order. If you have any demands for 2SJ380(F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SJ380(F) Atribi pwodwi yo

    Nimewo Pati : 2SJ380(F)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET P-CH 100V 12A TO220NIS
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
    RD sou (Max) @ Id, Vgs : 210 mOhm @ 6A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 35W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220NIS
    Pake / Ka : TO-220-3 Full Pack