Nimewo Pati :
FFSH20120ADN-F155
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SIC 1200V 10A TO247
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
10A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 10A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200µA @ 1200V
Operating Tanperati - Junction :
-55°C ~ 175°C
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247