Nimewo Pati :
SIDC11D60SIC3
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 600V 4A WAFER
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
4A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.9V @ 4A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 600V
Kapasite @ Vr, F :
150pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-55°C ~ 175°C