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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. TSM052N06PQ56 RLG

Taiwan Semiconductor Corporation - TSM052N06PQ56 RLG

KEY Part #: K6401279

[3105PC Stock]

    Nimewo Pati:
    TSM052N06PQ56 RLG
    Manifakti:
    Taiwan Semiconductor Corporation
    Detaye deskripsyon:
    MOSFET N-CH 60V 100A 8PDFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Taiwan Semiconductor Corporation TSM052N06PQ56 RLG electronic components. TSM052N06PQ56 RLG can be shipped within 24 hours after order. If you have any demands for TSM052N06PQ56 RLG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TSM052N06PQ56 RLG Atribi pwodwi yo

    Nimewo Pati : TSM052N06PQ56 RLG
    Manifakti : Taiwan Semiconductor Corporation
    Deskripsyon : MOSFET N-CH 60V 100A 8PDFN
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 5.2 mOhm @ 20A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
    Vgs (Max) : ±25V
    Antre kapasite (Ciss) (Max) @ Vds : 3686pF @ 30V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 83W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-PDFN (5x6)
    Pake / Ka : 8-PowerTDFN

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