Infineon Technologies - SPI100N03S2-03

KEY Part #: K6409480

[266PC Stock]


    Nimewo Pati:
    SPI100N03S2-03
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 30V 100A I2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
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    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPI100N03S2-03 Atribi pwodwi yo

    Nimewo Pati : SPI100N03S2-03
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 30V 100A I2PAK
    Seri : OptiMOS™
    Estati Pati : Discontinued at Digi-Key
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 80A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 7020pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 300W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO262-3-1
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA