IRF6643TRPBF Pricing (USD) [99089PC Stock]
- 1 pcs$0.62713
- 4,800 pcs$0.62401
- Nimewo Pati:
- IRF6643TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 150V 6.2A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6643TRPBF electronic components. IRF6643TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6643TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6643TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF6643TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 150V 6.2A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A (Ta), 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
34.5 mOhm @ 7.6A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2340pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 89W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ MZ
Pake / Ka :
DirectFET™ Isometric MZ
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