NXP USA Inc. - PMN49EN,165

KEY Part #: K6400101

[8870PC Stock]


    Nimewo Pati:
    PMN49EN,165
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 30V 4.6A 6TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Rèkteur - Arrays and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PMN49EN,165 electronic components. PMN49EN,165 can be shipped within 24 hours after order. If you have any demands for PMN49EN,165, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMN49EN,165 Atribi pwodwi yo

    Nimewo Pati : PMN49EN,165
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 30V 4.6A 6TSOP
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 47 mOhm @ 2A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 8.8nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 30V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.75W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-TSOP
    Pake / Ka : SC-74, SOT-457