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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTMKE4891NT1G

ON Semiconductor - NTMKE4891NT1G

KEY Part #: K6406488

[8649PC Stock]

    Nimewo Pati:
    NTMKE4891NT1G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 25V 129A ICEPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Tiristors - SCR, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTMKE4891NT1G electronic components. NTMKE4891NT1G can be shipped within 24 hours after order. If you have any demands for NTMKE4891NT1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMKE4891NT1G Atribi pwodwi yo

    Nimewo Pati : NTMKE4891NT1G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 25V 129A ICEPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 25V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26.7A (Ta), 151A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 2.6 mOhm @ 29A, 10V
    Vgs (th) (Max) @ Id : 2.4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 66nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 4360pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2.8W (Ta), 89W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 4-ICEPAK - E1 PAD (6.3x4.9)
    Pake / Ka : 5-ICEPAK

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