Vishay Semiconductor Diodes Division - BAT81S-TR

KEY Part #: K6455660

BAT81S-TR Pricing (USD) [1938267PC Stock]

  • 1 pcs$0.01908
  • 50,000 pcs$0.01557

Nimewo Pati:
BAT81S-TR
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 40V 30MA DO35. Schottky Diodes & Rectifiers 150mA 40 Volt 500mA IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAT81S-TR electronic components. BAT81S-TR can be shipped within 24 hours after order. If you have any demands for BAT81S-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAT81S-TR Atribi pwodwi yo

Nimewo Pati : BAT81S-TR
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 40V 30MA DO35
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 40V
Kouran - Mwayèn Rèktifye (Io) : 30mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1V @ 15mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 200nA @ 40V
Kapasite @ Vr, F : 1.6pF @ 1V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AH, DO-35, Axial
Pake Aparèy Founisè : DO-35
Operating Tanperati - Junction : 125°C (Max)

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