DMN3730UFB4-7B Pricing (USD) [1432838PC Stock]
- 1 pcs$0.02581
- Nimewo Pati:
- DMN3730UFB4-7B
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 25V-30V X1-DFN1006.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - IGBTs - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3730UFB4-7B electronic components. DMN3730UFB4-7B can be shipped within 24 hours after order. If you have any demands for DMN3730UFB4-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3730UFB4-7B Atribi pwodwi yo
Nimewo Pati :
DMN3730UFB4-7B
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 25V-30V X1-DFN1006
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
750mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
460 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.6nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
64.3pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
470mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
X2-DFN1006-3
Pake / Ka :
3-XFDFN
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