Diodes Incorporated - DMP1012UCB9-7

KEY Part #: K6392980

DMP1012UCB9-7 Pricing (USD) [263135PC Stock]

  • 1 pcs$0.14056
  • 3,000 pcs$0.12490

Nimewo Pati:
DMP1012UCB9-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET P-CH 8V 10A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP1012UCB9-7 Atribi pwodwi yo

Nimewo Pati : DMP1012UCB9-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET P-CH 8V 10A
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 10 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id : 1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10.5nC @ 4.5V
Vgs (Max) : -6V
Antre kapasite (Ciss) (Max) @ Vds : 1060pF @ 4V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 890mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : U-WLB1515-9
Pake / Ka : 9-UFBGA, WLBGA