Nimewo Pati :
TK25E60X5,S1X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 600V 25A TO-220AB
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
140 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs :
60nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2400pF @ 300V
Disipasyon Pouvwa (Max) :
180W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220