Taiwan Semiconductor Corporation - ES1BHM2G

KEY Part #: K6426650

ES1BHM2G Pricing (USD) [1206416PC Stock]

  • 1 pcs$0.03066

Nimewo Pati:
ES1BHM2G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 100V 1A DO214AC. Rectifiers 35ns 1A 100V Sp Fst Recov Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - TRIACs, Diodes - RF, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation ES1BHM2G electronic components. ES1BHM2G can be shipped within 24 hours after order. If you have any demands for ES1BHM2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1BHM2G Atribi pwodwi yo

Nimewo Pati : ES1BHM2G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 100V 1A DO214AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 16pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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