Vishay Semiconductor Diodes Division - UG06D/54

KEY Part #: K6458183

UG06D/54 Pricing (USD) [941996PC Stock]

  • 1 pcs$0.04143
  • 5,500 pcs$0.04123

Nimewo Pati:
UG06D/54
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 600MA MPG06.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UG06D/54 electronic components. UG06D/54 can be shipped within 24 hours after order. If you have any demands for UG06D/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG06D/54 Atribi pwodwi yo

Nimewo Pati : UG06D/54
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 600MA MPG06
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 600mA
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 600mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : 9pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : MPG06, Axial
Pake Aparèy Founisè : MPG06
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE30AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.4A DO221AC. Rectifiers 3.0A, 400V, ESD PROTECTION, SLIM SMA

  • SE30AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.4A DO221AC. Rectifiers 3.0A, 200V, ESD PROTECTION, SLIM SMA

  • SE30AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in

  • SE20AFJ-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.3A DO221AC. Rectifiers 2 Amp 600 volts ESD PROTECTION 13in

  • SE20AFGHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in