IRL40T209ATMA1 Pricing (USD) [26634PC Stock]
- 1 pcs$1.54739
- Nimewo Pati:
- IRL40T209ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 40V 586A PG-HSOG-8-1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRL40T209ATMA1 electronic components. IRL40T209ATMA1 can be shipped within 24 hours after order. If you have any demands for IRL40T209ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL40T209ATMA1 Atribi pwodwi yo
Nimewo Pati :
IRL40T209ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 40V 586A PG-HSOG-8-1
Seri :
StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
0.72 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
269nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
16000pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-1
Pake / Ka :
8-PowerSFN
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