Infineon Technologies - FF50R12RT4HOSA1

KEY Part #: K6532659

FF50R12RT4HOSA1 Pricing (USD) [1939PC Stock]

  • 1 pcs$22.33106

Nimewo Pati:
FF50R12RT4HOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE 1200V 50A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies FF50R12RT4HOSA1 electronic components. FF50R12RT4HOSA1 can be shipped within 24 hours after order. If you have any demands for FF50R12RT4HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF50R12RT4HOSA1 Atribi pwodwi yo

Nimewo Pati : FF50R12RT4HOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE 1200V 50A
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Pouvwa - Max : 285W
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 2.8nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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