Infineon Technologies - F475R12KS4BOSA1

KEY Part #: K6534462

F475R12KS4BOSA1 Pricing (USD) [798PC Stock]

  • 1 pcs$58.19527

Nimewo Pati:
F475R12KS4BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE VCES 600V 75A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Infineon Technologies F475R12KS4BOSA1 electronic components. F475R12KS4BOSA1 can be shipped within 24 hours after order. If you have any demands for F475R12KS4BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

F475R12KS4BOSA1 Atribi pwodwi yo

Nimewo Pati : F475R12KS4BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE VCES 600V 75A
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 100A
Pouvwa - Max : 500W
Vce (sou) (Max) @ Vge, Ic : 3.75V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 5.1nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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