Microsemi Corporation - JANTX1N5806US

KEY Part #: K6443254

JANTX1N5806US Pricing (USD) [7311PC Stock]

  • 1 pcs$7.53156
  • 10 pcs$6.84495
  • 25 pcs$6.33163
  • 100 pcs$5.81821
  • 250 pcs$5.30485

Nimewo Pati:
JANTX1N5806US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 150V 1A D5A. ESD Suppressors / TVS Diodes D MET 2.5A SFST 150V HR 2FFT
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N5806US Atribi pwodwi yo

Nimewo Pati : JANTX1N5806US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 150V 1A D5A
Seri : Military, MIL-PRF-19500/477
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 875mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 1µA @ 150V
Kapasite @ Vr, F : 25pF @ 10V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, A
Pake Aparèy Founisè : D-5A
Operating Tanperati - Junction : -65°C ~ 175°C

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