Vishay Semiconductor Diodes Division - VS-100MT060WSP

KEY Part #: K6532803

VS-100MT060WSP Pricing (USD) [1801PC Stock]

  • 1 pcs$24.03437
  • 105 pcs$22.88989

Nimewo Pati:
VS-100MT060WSP
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-100MT060WSP electronic components. VS-100MT060WSP can be shipped within 24 hours after order. If you have any demands for VS-100MT060WSP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-100MT060WSP Atribi pwodwi yo

Nimewo Pati : VS-100MT060WSP
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 107A
Pouvwa - Max : 403W
Vce (sou) (Max) @ Vge, Ic : 2.49V @ 15V, 60A
Kouran - Cutoff Pèseptè (Max) : 100µA
Antre kapasite (Cies) @ Vce : 9.5nF @ 30V
Antre : Single Phase Bridge Rectifier
NTC thermistor : Yes
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 12-MTP Module
Pake Aparèy Founisè : MTP

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