PSMN006-20K,518 Pricing (USD) [12483PC Stock]
- 10,000 pcs$0.20576
- Nimewo Pati:
- PSMN006-20K,518
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 32A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Bridge rèktifikateur and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN006-20K,518 electronic components. PSMN006-20K,518 can be shipped within 24 hours after order. If you have any demands for PSMN006-20K,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN006-20K,518 Atribi pwodwi yo
Nimewo Pati :
PSMN006-20K,518
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 20V 32A 8-SOIC
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
32A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
5 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 2.5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
4350pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
8.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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