Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE GEN PURP 50V 10A R6
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 10A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 50V
Kapasite @ Vr, F :
150pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
R-6
Operating Tanperati - Junction :
-65°C ~ 150°C