Nimewo Pati :
ISL6612AECB-T
Manifakti :
Renesas Electronics America Inc.
Deskripsyon :
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Synchronous
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
10.8V ~ 13.2V
Vòltaj lojik - VIL, VIH :
-
Kouran - Peak Sòti (Sous, Lavabo) :
1.25A, 2A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
36V
Rise / Fall Time (Tip) :
26ns, 18ns
Operating Tanperati :
0°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Pake Aparèy Founisè :
8-SOIC-EP