Vishay Semiconductor Diodes Division - 1N5819/54

KEY Part #: K6447530

[1393PC Stock]


    Nimewo Pati:
    1N5819/54
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 40V 1A DO204AL.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division 1N5819/54 electronic components. 1N5819/54 can be shipped within 24 hours after order. If you have any demands for 1N5819/54, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N5819/54 Atribi pwodwi yo

    Nimewo Pati : 1N5819/54
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 40V 1A DO204AL
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 40V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 600mV @ 1A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 1mA @ 40V
    Kapasite @ Vr, F : -
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AL, DO-41, Axial
    Pake Aparèy Founisè : DO-204AL (DO-41)
    Operating Tanperati - Junction : -65°C ~ 125°C

    Ou ka enterese tou
    • MA3X78600L

      Panasonic Electronic Components

      DIODE SCHOTTKY 30V 100MA MINI3.

    • MA3X74800L

      Panasonic Electronic Components

      DIODE SCHOTTKY 20V 500MA MINI3.

    • 1PS193,115

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • 1PS193,135

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • 8EWS12S

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1.2KV 8A DPAK.

    • 50WQ06FNTRR

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 60V 5.5A DPAK.