Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Single
  5. 1N5821US

Microsemi Corporation - 1N5821US

KEY Part #: K6444279

[2503PC Stock]

    Nimewo Pati:
    1N5821US
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    DIODE SCHOTTKY 30V 3A B-MELF.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - IGBTs - Arrays and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation 1N5821US electronic components. 1N5821US can be shipped within 24 hours after order. If you have any demands for 1N5821US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N5821US Atribi pwodwi yo

    Nimewo Pati : 1N5821US
    Manifakti : Microsemi Corporation
    Deskripsyon : DIODE SCHOTTKY 30V 3A B-MELF
    Seri : -
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 30V
    Kouran - Mwayèn Rèktifye (Io) : 3A
    Voltage - Forward (Vf) (Max) @ Si : 500mV @ 3A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 100µA @ 30V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : SQ-MELF, B
    Pake Aparèy Founisè : B, SQ-MELF
    Operating Tanperati - Junction : -65°C ~ 125°C

    Dènye nouvèl

    Microsemi Adaptec® HBA 1100 SAS/SATA Host Bus Adapters
    Ou ka enterese tou
    • DB3Y313KEL

      Panasonic Electronic Components

      DIODE SCHOTTKY 30V 200MA SOT23-3.

    • VS-8EWS12STRPBF

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1.2KV 8A DPAK.

    • SCS220KGHRC

      Rohm Semiconductor

      DIODE SCHOTTKY 1200V 20A TO220-2. Schottky Diodes & Rectifiers 1200V 20A SiC SBD AEC-Q101 Qualified

    • RFUS10TF4S

      Rohm Semiconductor

      DIODE GEN PURP 430V 10A TO220NFM. Diodes - General Purpose, Power, Switching DIODE SWITCH 600V 10A 3PIN 3+TAB

    • LSIC2SD120E30CC

      Littelfuse Inc.

      SCHOTTKY DIODE SIC 1200V 30A. Schottky Diodes & Rectifiers 1200V 30A TO-247-3L SiC Schottky Diode

    • MBR750

      ON Semiconductor

      DIODE SCHOTTKY 50V 7.5A TO220AC. Schottky Diodes & Rectifiers 7.5 amp Rectifiers Schottky Barrier

    Pati cho