[12555PC Stock]
- Nimewo Pati:
- IRLI530N
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 12A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLI530N electronic components. IRLI530N can be shipped within 24 hours after order. If you have any demands for IRLI530N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLI530N Atribi pwodwi yo
Nimewo Pati :
IRLI530N
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 12A TO220FP
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
41W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB Full-Pak
Pake / Ka :
TO-220-3 Full Pack
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