Vishay Semiconductor Diodes Division - UG12JT-E3/45

KEY Part #: K6441280

UG12JT-E3/45 Pricing (USD) [51954PC Stock]

  • 1 pcs$0.73167
  • 10 pcs$0.65684
  • 25 pcs$0.61979
  • 100 pcs$0.52806
  • 250 pcs$0.49582
  • 500 pcs$0.43384
  • 1,000 pcs$0.34004
  • 2,500 pcs$0.31658
  • 5,000 pcs$0.31267

Nimewo Pati:
UG12JT-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 12A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UG12JT-E3/45 electronic components. UG12JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG12JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG12JT-E3/45 Atribi pwodwi yo

Nimewo Pati : UG12JT-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 12A TO220AC
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 12A
Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 12A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 30µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : 150°C (Max)

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