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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
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  3. Disrè Semiconductor Pwodwi yo
  4. Diodes - Rèkteur - Arrays
  5. CDBGBSC201200-G

Comchip Technology - CDBGBSC201200-G

KEY Part #: K6470411

CDBGBSC201200-G Pricing (USD) [6888PC Stock]

  • 1 pcs$5.98205
Nimewo Pati:
CDBGBSC201200-G
Manifakti:
Comchip Technology
Detaye deskripsyon:
DIODE DUAL SILICON CARBIDE POWER. Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 1200V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Comchip Technology CDBGBSC201200-G electronic components. CDBGBSC201200-G can be shipped within 24 hours after order. If you have any demands for CDBGBSC201200-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBGBSC201200-G Atribi pwodwi yo

Nimewo Pati : CDBGBSC201200-G
Manifakti : Comchip Technology
Deskripsyon : DIODE DUAL SILICON CARBIDE POWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 1200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 25.9A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 10A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
Operating Tanperati - Junction : -55°C ~ 175°C
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247

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