[6110PC Stock]
- Nimewo Pati:
- UG10DCT-5410HE3/45
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE ARRAY GP T0220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division UG10DCT-5410HE3/45 electronic components. UG10DCT-5410HE3/45 can be shipped within 24 hours after order. If you have any demands for UG10DCT-5410HE3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UG10DCT-5410HE3/45 Atribi pwodwi yo
Nimewo Pati :
UG10DCT-5410HE3/45
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE ARRAY GP T0220AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
5A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Operating Tanperati - Junction :
-40°C ~ 150°C
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220AB
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