IRFB3207ZPBF Pricing (USD) [28864PC Stock]
- 1 pcs$1.44109
- 10 pcs$1.30315
- 100 pcs$0.99341
- 500 pcs$0.77265
- 1,000 pcs$0.64019
- Nimewo Pati:
- IRFB3207ZPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 75V 120A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Diodes - RF, Transistors - Bipolè (BJT) - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB3207ZPBF electronic components. IRFB3207ZPBF can be shipped within 24 hours after order. If you have any demands for IRFB3207ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB3207ZPBF Atribi pwodwi yo
Nimewo Pati :
IRFB3207ZPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 75V 120A TO-220AB
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.1 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
170nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6920pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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